Peer-reviewed Papers
J. Tatebayashi, M. Mishina, N. Nishiyama, D. Timmerman, S. Ichikawa, and Y. Fujiwara,
"Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition'',
Japanese Journal of Applied Physics 60(SC), SCCE05 (2021).
DOI: 10.35848/1347-4065/abebbbY. Nagasawa, K. Kojima, A. Hirano, H. Sako, A. Hashimoto, R. Sugie, M. Ippommatsu, Y. Honda, H. Amano, and S. F. Chichibu,
"Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells'',
Journal of Physics D: Applied Physics 54(48), 485107 (2021).
DOI: 10.1088/1361-6463/ac2065K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono, S. Ishibashi, and S. F. Chichibu,
"Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg'',
Applied Physics Letters 119(18), 182106 (2021).
DOI: 10.1063/5.0066347Y. Nagasawa, A. Hirano, M. Ippommatsu, H. Sako, A. Hashimoto, R. Sugie, Y. Honda, H. Amano, I. Akasaki, K. Kojima, and S. F. Chichibu,
"Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates'',
Journal of Applied Physics 129(16), 164503 (2021).
DOI: 10.1063/5.0042036T. Nakano, K. Mochizuki, T. Arikawa, H. Nakagawa, S. Usami, Y. Honda, H. Amano, A. Vogt, S. Schutt, M. Fiederle, K. Kojima, S. F. Chichibu, Y. Inoue, and T. Aoki,
"Effective neutron detection using vertical-type BGaN diodes'',
Journal of Applied Physics 130(12), 124501 (2021).
DOI: 10.1063/5.0051053T. Iwaya, S. Ichikawa, M. Murakami, D. Timmerman, J. Tatebayashi, and Y. Fujiwara,
"Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder'',
Applied Physics Express 14(12), 122002 (2021).
DOI: 10.35848/1882-0786/ac3545A. Takeo, S. Ichikawa, S. Maeda, D. Timmerman, J. Tatebayashi, and Y. Fujiwara,
"Droop-free amplified red emission from Eu ions in GaN'',
Japanese Journal of Applied Physics 60(12), 120905 (2021).
DOI: 10.35848/1347-4065/ac3b88L.Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, A. Uedono, S. Ishibashi, T. Takeuchi, M. Miyoshi, and S. F. Chichibu,
"Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy'',
Applied Physics Letters 119(9), 091105 (2021).
DOI: 10.1063/5.0066263S. Ichikawa, M. Funato, and Y. Kawakami,
"Critical layer thickness of wurtzite heterostructures with arbitrary pairs of growth planes and slip systems'',
Semiconductor Science and Technology 36(8), 085016 (2021).
DOI: 10.1088/1361-6641/ac0d95S. Ichikawa, M. Funato, and Y. Kawakami,
"Enhanced nonradiative recombination in AlxGa1-xN-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction'',
Applied Physics Express 14(3), 031007 (2021).
DOI: 10.35848/1882-0786/abe658S. Ichikawa, K. Shiomi, T. Morikawa, D. Timmerman, Y. Sasaki, J. Tatebayashi, and Y. Fujiwara,
"Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut'',
Applied Physics Express 14(3), 031008 (2021).
DOI: 10.35848/1882-0786/abe603S. Ichikawa, Y. Sasaki, T. Iwaya, M. Murakami, M. Ashida, D. Timmerman, J. Tatebayashi, and Y. Fujiwara,
"Enhanced Red Emission of Eu,O-Codoped Ga N Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes'',
Physical Review Applied 15(3), 034086 (2021).
DOI: 10.1103/PhysRevApplied.15.034086A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and S. Ishibashi,
"Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam'',
Scientific Reports 11(1), 20660 (2021).
DOI: 10.1038/s41598-021-00102-2H. Yasuda, T. Nishitani, S. Ichikawa, S. Hatanaka, Y. Honda, and H. Amano,
"Development of pulsed TEM equipped with nitride semiconductor photocathode for high-speed observation and material nanofabrication'',
Quantum Beam Science 5(1), 5 (2021).
DOI: 10.3390/qubs5010005D. Tomida, Q. Bao, M. Saito, K. Kurimoto, K. Kojima, K. Qiao, T. Ishiguro, and S. F. Chichibu,
"Facile method for the synthesis of zinc- or magnesium-doped gallium nitride powders from gallium metal'',
Journal of Crystal Growth 570, 126190 (2021).
DOI: 10.1016/j.jcrysgro.2021.126190H. Asai, K. Kojima, S. F. Chichibu, and K. Fukuda,
"Theoretical analysis of photo-recycling effect on external quantum efficiency considering spatial carrier dynamics'',
Japanese Journal of Applied Physics 59(SG), SGGK02 (2020).
DOI: 10.7567/1347-4065/ab5b4dD. Timmerman, B. Mitchell, S. Ichikawa, M. Nagai, M. Ashida, and Y. Fujiwara,
"Carrier dynamics and excitation of Eu3+ ions in GaN'',
Physical Review B 101(24), 245306 (2020).
DOI: 10.1103/PhysRevB.101.245306R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, and Y. Fujiwara,
"Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs'',
Journal of Applied Physics 127(23), 233101 (2020).
DOI: 10.1063/1.5144159S. F. Chichibu, A. Uedono, K. Kojima, K. Koike, M. Yano, S.-I. Gonda, and S. Ishibashi,
"Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO'',
Journal of Applied Physics 127(21), 0011309 (2020).
DOI: 10.1063/5.0011309M. Ogawa, J. Tatebayashi, N. Fujioka, R. Higashi, M. Fujita, S. Noda, D. Timmerman, S. Ichikawa, and Y. Fujiwara,
"Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities'',
Applied Physics Letters 116(18), 181102 (2020).
DOI: 10.1063/1.5142778K. Kojima and S. F. Chichibu,
"Urbach-Martienssen tail as the origin of the two-peak structure in the photoluminescence spectra for the near-band-edge emission of a freestanding GaN crystal observed by omnidirectional photoluminescence spectroscopy'',
Applied Physics Letters 117(17), 171103 (2020).
DOI: 10.1063/5.0028134D.D. Van Der Gon, D. Timmerman, Y. Matsude, S. Ichikawa, M. Ashida, P. Schall, and Y. Fujiwara,
"Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs'',
Optics Letters 45(14), 3973 (2020).
DOI: 10.1364/OL.397848K. Kojima and S. F. Chichibu,
"Correlation between the internal quantum efficiency and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method'',
Applied Physics Express 13(12), 121005 (2020).
DOI: 10.35848/1882-0786/abcd73Y. Nagasawa, A. Hirano, M. Ippommatsu, H. Sako, A. Hashimoto, R. Sugie, Y. Honda, H. Amano, I. Akasaki, K. Kojima, and S. F. Chichibu,
"Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps'',
Applied Physics Express 13(12), 124001 (2020).
DOI: 10.35848/1882-0786/abcb49S. Ichikawa, N. Yoshioka, J. Tatebayashi, and Y. Fujiwara,
"Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength'',
Journal of Applied Physics 127(11), 113103 (2020).
DOI: 10.1063/1.5140715M. Ogawa, J. Tatebayashi, N. Fujioka, R. Higashi, S. Ichikawa, M. Kondow, D. Timmerman, and Y. Fujiwara,
"Enhanced photoluminescence in high-Q photonic crystal nanocavities with Er,O-Codoped GaAs'',
Zairyo/Journal of the Society of Materials Science, Japan 69(11), 823 (2020).
DOI: 10.2472/jsms.69.823K. Kojima, K. Ikemura, and S. F. Chichibu,
"Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy'',
Applied Physics Express 13(10), 105504 (2020).
DOI: 10.35848/1882-0786/abb788S. Ichikawa, T. Inaba, K. Shiomi, J. Tatebayashi, D. Timmerman, and Y. Fujiwara,
"Perspective of semiconductor technologies contributed to the IoT society: II: Ultra-narrow-band light emitting diodes based on rare-earth-doped semiconductors towards display application'',
Zairyo/Journal of the Society of Materials Science, Japan 69(10), 762 (2020).
DOI: 10.2472/JSMS.69.762T. Iwaya, S. Ichikawa, M. Murakami, J. Tatebayashi, and Y. Fujiwara,
"Investigation on suitable structure for laser oscillation in eu-doped gan with two-dimensional photonic crystal nanocavities'',
Zairyo/Journal of the Society of Materials Science, Japan 69(10), 721 (2020).
DOI: 10.2472/JSMS.69.721R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami,
"Lattice relaxation in semipolar AlxGa1-xN grown on (1-102) AlN substrates'',
Applied Physics Express 13(6), 061008 (2020).
DOI: 10.35848/1882-0786/ab9183D. Timmerman, Y. Matsude, Y. Sasaki, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara,
"Purcell-Effect-Enhanced Radiative Rate of Eu3+ Ions in GaN Microdisks'',
Physical Review Applied 14(6), 064059 (2020).
DOI: 10.1103/PhysRevApplied.14.064059D. Tomida, Q. Bao, M. Saito, R. Osanai, K. Shima, K. Kojima, T. Ishiguro, and S. F. Chichibu,
"Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave'',
Applied Physics Express 13(5), 055505 (2020).
DOI: 10.35848/1882-0786/ab8722M. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. F. Chichibu, and H. Amano,
"Impact of high-Temperature implantation of Mg ions into GaN'',
Japanese Journal of Applied Physics 59(5), 056502 (2020).
DOI: 10.35848/1347-4065/ab8b3dM. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S. F. Chichibu, K.J. Chen, and H. Amano,
"Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature'',
Physica Status Solidi (B) Basic Research 257(4), 1900554 (2020).
DOI: 10.1002/pssb.201900554A. Kamiyama, K. Kojima, S. F. Chichibu, and G. Yusa,
"Analyzing oxygen and silicon incorporation in GaN microstructures composed of c-planes and angled facets by confocal magneto-photoluminescence microscopy'',
AIP Advances 10(3), 035215 (2020).
DOI: 10.1063/1.5144549K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu,
"Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications'',
Applied Physics Letters 117(3), 031103 (2020).
DOI: 10.1063/5.0013112T. Inaba, J. Tatebayashi, K. Shiomi, D. Timmerman, S. Ichikawa, and Y. Fujiwara,
"GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors'',
ACS Applied Electronic Materials 2(3), 732 (2020).
DOI: 10.1021/acsaelm.9b00806H. Yasuda, K. Sato, S. Ichikawa, M. Imamura, K. Takahashi, and H. Mori,
"Promotion in solid phase reaction of Pt/SiOxbilayer film by electron-orbital-selective-excitation'',
RSC Advances 11(2), 894 (2020).
DOI: 10.1039/d0ra07151jK. Kojima, F. Horikiri, Y. Narita, T. Yoshida, H. Fujikura, and S. F. Chichibu,
"Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals'',
Applied Physics Express 13(1), 012004 (2020).
DOI: 10.7567/1882-0786/ab5adcS. F. Chichibu, K. Shima, K. Kojima, and Y. Kangawa,
"Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN'',
Scientific Reports 10(1), 18570 (2020).
DOI: 10.1038/s41598-020-75380-3B. Mitchell, D. Timmerman, W. Zhu, J.Y. Lin, H.X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara,
"Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology'',
Journal of Applied Physics 127(1), 013102 (2020).
DOI: 10.1063/1.5134050D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, and Y. Fujiwara,
"Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in Ga N'',
Physical Review Applied 13(1), 014044 (2020).
DOI: 10.1103/PhysRevApplied.13.014044S. F. Chichibu, K. Shima, K. Kojima, S.-Y. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono,
"Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures'',
Japanese Journal of Applied Physics 58(SC), SC0802 (2019).
DOI: 10.7567/1347-4065/ab0d06K. Ebara, K. Mochizuki, Y. Inoue, T. Aoki, K. Kojima, S. F. Chichibu, and T. Nakano,
"Impact of growth temperature on the structural properties of bgan films grown by metal-organic vapor phase epitaxy using trimethylboron'',
Japanese Journal of Applied Physics 58(SC), SC1042 (2019).
DOI: 10.7567/1347-4065/ab1395J. Tatebayashi, T. Yamada, T. Inaba, S. Ichikawa, and Y. Fujiwara,
"Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles'',
Japanese Journal of Applied Physics 58(SC), SCCC09 (2019).
DOI: 10.7567/1347-4065/ab0ad1Y. Nagasawa, R. Sugie, K. Kojima, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu,
"Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy'',
Journal of Applied Physics 126(21), 215703 (2019).
DOI: 10.1063/1.5125623H. Kobayashi, S. Ichikawa, M. Funato, and Y. Kawakami,
"Self-Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters'',
Advanced Optical Materials 7(21), 1900860 (2019).
DOI: 10.1002/adom.201900860S. F. Chichibu, K. Kojima, K. Hazu, Y. Ishikawa, K. Furusawa, S. Mita, R. Collazo, Z. Sitar, and A. Uedono,
"In-plane optical polarization and dynamic properties of the near-band-edge emission of an m -plane freestanding AlN substrate and a homoepitaxial film'',
Applied Physics Letters 115(15), 151903 (2019).
DOI: 10.1063/1.5116900A. Uedono, H. Iguchi, T. Narita, K. Kataoka, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Shima, K. Kojima, S. F. Chichibu, and S. Ishibashi,
"Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams'',
Physica Status Solidi (B) Basic Research 256(10), 1900104 (2019).
DOI: 10.1002/pssb.201900104J. Tatebayashi, T. Yamada, T. Inaba, D. Timmerman, S. Ichikawa, and Y. Fujiwara,
"Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles'',
Applied Physics Express 12(9), 095003 (2019).
DOI: 10.7567/1882-0786/ab37b0R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and V. Dierolf,
"Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions'',
Physical Review B 100(8), 081201 (2019).
DOI: 10.1103/PhysRevB.100.081201K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, and S. F. Chichibu,
"Internal quantum efficiency of radiation in a bulk CH3NH3PbBr3 perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy'',
APL Materials 7(7), 071116 (2019).
DOI: 10.1063/1.5110652Y. Nagasawa, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu,
"Comparison of Al x Ga1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates having macrosteps'',
Applied Physics Express 12(6), 064009 (2019).
DOI: 10.7567/1882-0786/ab21a9K. Kojima, K. Ikemura, and S. F. Chichibu,
"Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere'',
Applied Physics Express 12(6), 062010 (2019).
DOI: 10.7567/1882-0786/ab2165Y. Anzai, M. Yamamoto, S. Genchi, K. Watanabe, T. Taniguchi, S. Ichikawa, Y. Fujiwara, and H. Tanaka,
"Broad range thickness identification of hexagonal boron nitride by colors'',
Applied Physics Express 12(5), 055007 (2019).
DOI: 10.7567/1882-0786/ab0e45B. Mitchell, R. Wei, J. Takatsu, D. Timmerman, T. Gregorkiewicz, W. Zhu, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, and V. Dierolf,
"Color-Tunablility in GaN LEDs Based on Atomic Emission Manipulation under Current Injection'',
ACS Photonics 6(5), 1153 (2019).
DOI: 10.1021/acsphotonics.8b01461M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami,
"AlxGa1-xN-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination'',
Advanced Optical Materials 7(2), 1801106 (2019).
DOI: 10.1002/adom.201801106K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu,
"Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps'',
Applied Physics Letters 114(1), 011102 (2019).
DOI: 10.1063/1.5063735H. Asai, K. Kojima, S. F. Chichibu, and K. Fukuda,
"Theoretical Formulation of Experimentally Observed Quantum Efficiency of Radiation in Semiconducting Crystal'',
Physical Review Applied 12(1), 014002 (2019).
DOI: 10.1103/PhysRevApplied.12.014002S. Ichikawa, M. Funato, and Y. Kawakami,
"Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates'',
Journal of Crystal Growth 522, 68 (2019).
DOI: 10.1016/j.jcrysgro.2019.06.010S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, and A. Uedono,
"Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate'',
Applied Physics Letters 112(21), 211901 (2018).
DOI: 10.1063/1.5030645H. Imagawa, X. Wu, H. Itahara, S. Yin, K. Kojima, S. F. Chichibu, and T. Sato,
"Photocatalytic NO removal over calcium-bridged siloxenes under ultraviolet and visible light irradiation'',
Dalton Transactions 47(20), 7070 (2018).
DOI: 10.1039/c7dt04310dK. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu,
"Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ) p-type GaN fabricated by sequential ion-implantation of Mg and H'',
Applied Physics Letters 113(19), 191901 (2018).
DOI: 10.1063/1.5050967K. Koike, M. Yano, S.-I. Gonda, A. Uedono, S. Ishibashi, K. Kojima, and S. F. Chichibu,
"Polarity-dependence of the defect formation in c -axis oriented ZnO by the irradiation of an 8 MeV proton beam'',
Journal of Applied Physics 123(16), 161562 (2018).
DOI: 10.1063/1.5010704S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi,
"The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN'',
Journal of Applied Physics 123(16), 161413 (2018).
DOI: 10.1063/1.5012994R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami,
"AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes'',
Applied Physics Express 11(6), 061001 (2018).
DOI: 10.7567/APEX.11.061001S. Ichikawa, M. Funato, and Y. Kawakami,
"Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-xN-related Materials'',
Physical Review Applied 10(6), 064027 (2018).
DOI: 10.1103/PhysRevApplied.10.064027A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi,
"Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams'',
Physica Status Solidi (B) Basic Research 255(4), 1700521 (2018).
DOI: 10.1002/pssb.201700521K. Sato, H. Yasuda, S. Ichikawa, M. Imamura, K. Takahashi, S. Hata, S. Matsumura, S. Anada, J.-G. Lee, and H. Mori,
"Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation'',
Acta Materialia 154, 284 (2018).
DOI: 10.1016/j.actamat.2018.05.045H. Itahara, X. Wu, H. Imagawa, S. Yin, K. Kojima, S. F. Chichibu, and T. Sato,
"Photocatalytic activity of silicon-based nanoflakes for the decomposition of nitrogen monoxide'',
Dalton Transactions 46(26), 8643 (2017).
DOI: 10.1039/c7dt01682dM. Oishi, S. Shiomi, T. Yamamoto, T. Ueki, Y. Kai, S. F. Chichibu, A. Takatori, and K. Kojima,
"High temperature degradation mechanism of a red phosphor, CaAlSiN3:Eu for solid-state lighting'',
Journal of Applied Physics 122(11), 113104 (2017).
DOI: 10.1063/1.5003087K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, A. Uedono, and S. F. Chichibu,
"Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate'',
Applied Physics Express 10(6), 061002 (2017).
DOI: 10.7567/APEX.10.061002M. Matsubara, W. Stevenson, J. Yabuki, X. Zeng, H. Dong, K. Kojima, S. F. Chichibu, K. Tamada, A. Muramatsu, G. Ungar, and K. Kanie,
"A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence'',
Chem 2(6), 860 (2017).
DOI: 10.1016/j.chempr.2017.05.001S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato,
"Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters'',
Advanced Materials 29(5), 1603644 (2017).
DOI: 10.1002/adma.201603644K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu,
"Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals'',
Applied Physics Letters 111(3), 032111 (2017).
DOI: 10.1063/1.4995398K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu,
"A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1-xN multiple quantum wells'',
Applied Physics Express 10(1), 015802 (2017).
DOI: 10.7567/APEX.10.015802K. Kojima, D. Kagaya, Y. Yamazaki, H. Ikeda, K. Fujito, and S. F. Chichibu,
"Spectroscopic ellipsometry studies on the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate'',
Japanese Journal of Applied Physics 55(5), 05FG04 (2016).
DOI: 10.7567/JJAP.55.05FG04K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu,
"Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer'',
Japanese Journal of Applied Physics 55(5), 05FA03 (2016).
DOI: 10.7567/JJAP.55.05FA03S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono,
"Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3 d transition-metal doping'',
Applied Physics Letters 108(2), 021904 (2016).
DOI: 10.1063/1.4939838K. Kojima, T. Ohtomo, K.-I. Ikemura, Y. Yamazaki, M. Saito, H. Ikeda, K. Fujito, and S. F. Chichibu,
"Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere'',
Journal of Applied Physics 120(1), 015704 (2016).
DOI: 10.1063/1.4955139K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu,
"Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method'',
Applied Physics Express 8(9), 095501 (2015).
DOI: 10.7567/APEX.8.095501Y. Iwata, R.G. Banal, S. Ichikawa, M. Funato, and Y. Kawakami,
"Emission mechanisms in al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy'',
Journal of Applied Physics 117(7), 075701 (2015).
DOI: 10.1063/1.4908282S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami,
"High quality semipolar (1102) AIGaN/AIN quantum wells with remarkably enhanced optical transition probabilities'',
Applied Physics Letters 104(25), 252102 (2014).
DOI: 10.1063/l.4884897lJ. Upham, H. Inoue, Y. Tanaka, W. Stumpf, K. Kojima, T. Asano, and S. Noda,
"Pulse capture without carrier absorption in dynamic Q photonic crystal nanocavities'',
Optics Express 22(13), 15459 (2014).
DOI: 10.1364/OE.22.015459M. Banihashemi, T. Nakamura, T. Kojima, K. Kojima, S. Noda, and V. Ahmadi,
"Far off-resonant coupling between photonic crystal microcavity and single quantum dot with resonant excitation'',
Applied Physics Letters 103(25), 251113 (2013).
DOI: 10.1063/1.4852555T. Kojima, K. Kojima, T. Asano, and S. Noda,
"Accurate alignment of a photonic crystal nanocavity with an embedded quantum dot based on optical microscopic photoluminescence imaging'',
Applied Physics Letters 102(1), 011110 (2013).
DOI: 10.1063/1.4773882S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto,
"Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes'',
Applied Physics Express 5(10), 101301 (2012).
DOI: 10.1143/APEX.5.101301A. A. Yamaguchi and K. Kojima,
"Optical polarization and anisotropic gain characteristics in semipolar and nonpolar InGaN quantum well lasers'',
Physica Status Solidi (C) Current Topics in Solid State Physics 9(3-4), 834 (2012).
DOI: 10.1002/pssc.201100308T. Nakamura, T. Asano, K. Kojima, T. Kojima, and S. Noda,
"Controlling the emission of quantum dots embedded in photonic crystal nanocavity by manipulating Q-factor and detuning'',
Physical Review B - Condensed Matter and Materials Physics 84(24), 245309 (2011).
DOI: 10.1103/PhysRevB.84.245309A. A. Yamaguchi and K. Kojima,
"A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells'',
Applied Physics Letters 98(10), 101905 (2011).
DOI: 10.1063/1.3561761K. Kojima, A. A. Yamaguchi, M. Funato, Y. Kawakami, and S. Noda,
"Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes'',
Journal of Applied Physics 110(4), 043115 (2011).
DOI: 10.1063/1.3627180K. Kojima, M. Funato, Y. Kawakami, and S. Noda,
"Valence band effective mass of non-c-plane nitride heterostructures'',
Journal of Applied Physics 107(12), 123105 (2010).
DOI: 10.1063/1.3448578K. Kojima, A. A. Yamaguchi, M. Funato, Y. Kawakami, and S. Noda,
"Gain anisotropy analysis in green ingan quantum wells with inhomogeneous broadening'',
Japanese Journal of Applied Physics 49(8 PART 1), 081001 (2010).
DOI: 10.1143/JJAP.49.081001M. Yamaguchi, T. Asano, K. Kojima, and S. Noda,
"Quantum electrodynamics of a nanocavity coupled with exciton complexes in a quantum dot'',
Physical Review B - Condensed Matter and Materials Physics 80(15), 155326 (2009).
DOI: 10.1103/PhysRevB.80.155326K. Kojima, H. Kamon, M. Funato, and Y. Kawakami,
"Optical anisotropy control of non-c-plane InGaN quantum wells'',
Japanese Journal of Applied Physics 48(8 Part 1), 0802011 (2009).
DOI: 10.1143/JJAP.48.080201M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai,
"Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers'',
Physical Review B - Condensed Matter and Materials Physics 78(23), 233303 (2008).
DOI: 10.1103/PhysRevB.78.233303K. Kojima, H. Kamon, M. Funato, and Y. Kawakami,
"Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells'',
Physica Status Solidi (C) 5(9), 3038 (2008).
DOI: 10.1002/pssc.200779277K. Kojima, M. Funato, Y. Kawakami, H. Braun, U. Schwarz, S. Nagahama, and T. Mukai,
"Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes'',
Physica Status Solidi (C) 5(6), 2126 (2008).
DOI: 10.1002/pssc.200778472B. Witzigmann, M. Tomamichel, S. Steiger, R.G. Veprek, K. Kojima, and U.T. Schwarz,
"Analysis of gain and luminescence in violet and blue GaInN - GaN quantum wells'',
IEEE Journal of Quantum Electronics 44(2), 144 (2008).
DOI: 10.1109/JQE.2007.910688K. Kojima, M. Funato, Y. Kawakami, S. Masui, S. Nagahama, and T. Mukai,
"Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (112-2) GaN substrate'',
Applied Physics Letters 91(25), 251107 (2007).
DOI: 10.1063/1.2799876K. Kojima, U.T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai,
"Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes'',
Optics Express 15(12), 7730 (2007).
DOI: 10.1364/OE.15.007730U.T. Schwarz, H. Braun, K. Kojima, Y. Kawakami, S. Nagahama, and T. Mukai,
"Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells'',
Applied Physics Letters 91(12), 123503 (2007).
DOI: 10.1063/1.2786602K. Kojima, M. Ueda, M. Funato, and Y. Kawakami,
"Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN'',
Physica Status Solidi (B) Basic Research 244(6), 1853 (2007).
DOI: 10.1002/pssb.200674865K. Kojima, M. Funato, Y. Kawakami, H. Braun, U.T. Schwarz, S. Nagahama, and T. Mukai,
"Comparison between optical gain spectra of in xGa 1-xN/In 0.02Ga 0.98N laser diodes emitting at 404 nm and 470 nm'',
Physica Status Solidi (A) Applications and Materials Science 204(6), 2108 (2007).
DOI: 10.1002/pssa.200674914K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, H. Braun, and U.T. Schwarz,
"Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm'',
Applied Physics Letters 89(24), 241127 (2006).
DOI: 10.1063/1.2404971M. Ueda, K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai,
"Epitaxial growth and optical properties of semipolar (112?2) GaN and InGaN/GaN quantum wells on GaN bulk substrates'',
Applied Physics Letters 89(21), 211907 (2006).
DOI: 10.1063/1.2397029K. Omae, T. Flissikowski, P. Misra, O. Brandt, H.T. Grahn, K. Kojima, and Y. Kawakami,
"Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M-plane GaN films on LiAlO2'',
Physica Status Solidi (C) 3, 1862 (2006).
DOI: 10.1002/pssc.200565216K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai,
"Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers'',
Solid State Communications 140(3-4), 182 (2006).
DOI: 10.1016/j.ssc.2006.07.038K. Omae, T. Flissikowski, P. Misra, O. Brandt, H.T. Grahn, K. Kojima, and Y. Kawakami,
"Dynamic polarization filtering in anisotropically strained M -plane GaN films'',
Applied Physics Letters 86(19), 1 (2005).
DOI: 10.1063/1.1927271K. Kojima, A. Shikanai, K. Omae, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, and Sg. Fujita,
"Optically pumped lasing and gain formation properties in blue In xGa1-xN MQWs'',
Physica Status Solidi (B) Basic Research 241(12), 2676 (2004).
DOI: 10.1002/pssb.200405096A. Shikanai, K. Kojima, K. Omae, Y. Kawakami, Y. Narukawa, T. Mukai, and S. Fujita,
"The hot carrier dynamics in InGaN multi-quantum well structure'',
Physica Status Solidi (B) Basic Research 240(2), 392 (2003).
DOI: 10.1002/pssb.200303256
Proceedings
S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono,
"Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors'',
20th International Workshop on Junction Technology, IWJT 2021 (2021).
DOI: 10.23919/IWJT52818.2021.9609493Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi,
"High brightness and RGB integration of eu-doped GaN-based red LEDs for ultrahigh-resolution micro-LED display'',
Digest of Technical Papers - SID International Symposium 51(1), 691 (2020).
DOI: 10.1002/sdtp.13962S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono,
"Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors'',
Proceedings of SPIE - The International Society for Optical Engineering 11280, 112800B (2020).
DOI: 10.1117/12.2545409K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu,
"Characterization of a self-organized deep-ultraviolet micro-light-emitting diode structure for high-speed solar-blind optical wireless communications'',
Optics InfoBase Conference Papers Part F183-CLEO-SI 2020, SM4R.6 (2020).
DOI: 10.1364/CLEO_SI.2020.SM4R.6K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu,
"Characterization of a Self-Organized Deep-Ultraviolet Micro-Light-Emitting Diode Structure for High-Speed Solar-Blind Optical Wireless Communications'',
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2020-May, 9193472 (2020).
[Link]Y. Yoshida, K. Kojima, M. Shiraiwa, A. Kanno, A. Hirano, Y. Nagasawa, M. Ippommatsu, N. Yamamoto, S. F. Chichibu, and Y. Awaji,
"Up-to 292-Mbps Deep-UV Communication over a Diffuse-Line-of-Sight Link Based on Silicon Photo Multiplier Array'',
2020 European Conference on Optical Communications, ECOC 2020 , 9333325 (2020).
DOI: 10.1109/ECOC48923.2020.9333325S. Copelman, H. Austin, D. Timmerman, J.D. Poplawsky, M. Waite, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, V. Dierolf, and B. Mitchell,
"Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN'',
Proceedings of SPIE - The International Society for Optical Engineering 11302, 113021Z (2020).
DOI: 10.1117/12.2544005J. Tatebayashi, S. Ichikawa, and Y. Fujiwara,
"Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities'',
Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials 71-72 (2020).
DOI: 10.23919/AM-FPD49417.2020.9224478Y. Yoshida, K. Kojima, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, S. F. Chichibu, A. Hirano, and M. Ippommatsu,
"An Outdoor evaluation of 1-gbps optical wireless communication using algan-based led in 280-nm band'',
Optics InfoBase Conference Papers Part F129-CLEO_SI 2019 (2019).
DOI: 10.1364/CLEO_SI.2019.SM2G.1Y. Yoshida, K. Kojima, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, S. F. Chichibu, A. Hirano, and M. Ippommatsu,
"An Outdoor Evaluation of 1-Gbps Optical Wireless Communication using AlGaN-based LED in 280-nm Band'',
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings , 8750309 (2019).
DOI: 10.23919/CLEO.2019.8750309K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu,
"Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes'',
19th International Workshop on Junction Technology, IWJT 2019 , 8802886 (2019).
DOI: 10.23919/IWJT.2019.8802886S. Sakai, K. Kojima, S. F. Chichibu, and A. A. Yamaguchi,
"Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes'',
Conference Digest - IEEE International Semiconductor Laser Conference 2018-September, 135 (2018).
DOI: 10.1109/ISLC.2018.8516203K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, and S. Chichibu,
"1.6-Gbps LED-Based Ultraviolet Communication at 280 nm in Direct Sunlight'',
European Conference on Optical Communication, ECOC 2018-September, 8535544 (2018).
DOI: 10.1109/ECOC.2018.8535544Y. Fujiwara, T. Inaba, K. Shiomi, S. Ichikawa, and J. Tatebayashi,
"Wavelength-stable and Narrow-band Red LED for monolithic micro-LED display'',
Proceedings of the International Display Workshops 1, 418 (2018).
[Link]M. Funato, S. Ichikawa, K. Kumamoto, and Y. Kawakami,
"Design of Al-rich AlGaN quantum well structures for efficient UV emitters'',
Proceedings of SPIE - The International Society for Optical Engineering 10104, 101040I (2017).
DOI: 10.1117/12.2254797K. Kanie, M. Matsubara, W. Stevenson, Y. Yamazaki, J. Yabuki, K. Kojima, M. Nakaya, S. F. Chichibu, A. Muramatsu, X. Zeng, and G. Ungar,
"Liquid-crystalline organic-inorganic hybrid dendrimer with a CdS nano-core: The self-organized structure-dependent photoluminescence behavior'',
22nd International Congress of Chemical and Process Engineering, CHISA 2016 and 19th Conference on Process Integration, Modelling and Optimisation for Energy Saving and Pollution Reduction, PRES 2016 2, 795 (2016).
[Link]A. A. Yamaguchi, T. Minami, S. Sakai, K. Kojima, and S. F. Chichibu,
"Alloy-compositional-fluctuation effects on optical gain characteristics in AlGaN and InGaN quantum-well laser diodes'',
Conference Digest - IEEE International Semiconductor Laser Conference , 7765814 (2016).
[Link]S. Ichikawa, M. Funato, and Y. Kawakami,
"Approaches to highly efficient UV emitters based on AlGaN quantum wells'',
Proceedings of SPIE - The International Society for Optical Engineering 9748, 97480U (2016).
DOI: 10.1117/12.2208779M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami,
"Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface'',
Proceedings of SPIE - The International Society for Optical Engineering 9926, 99260S (2016).
DOI: 10.1117/12.2237606M. Matsuo, T. Murayama, K. Koike, S. Sasa, M. Yano, S.-I. Gonda, A. Uedono, R. Ishigami, K. Kume, T. Ohtomo, E. Furukawa, Y. Yamazaki, K. Kojima, and S. Chichibu,
"Polarity dependent radiation hardness of GaN'',
IMFEDK 2015 - 2015 International Meeting for Future of Electron Devices, Kansai 50-51 (2015).
DOI: 10.1109/IMFEDK.2015.7158544T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi,
"Defect electronics in sic and fabrication of ultrahigh-voltage bipolar devices'',
ECS Transactions 50(3), 25 (2013).
DOI: 10.1149/05003.0025ecstK. Kojima, K. Hikoyama, T. Nakamura, T. Kojima, T. Asano, and S. Noda,
"Modal volume control of a photonic crystal nanocavity'',
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest , 6600389 (2013).
DOI: 10.1109/CLEOPR.2013.6600389T. Nakamura, T. Asano, K. Kojima, T. Kojima, and S. Noda,
"Control of the Purcell effect of quantum dots embedded in photonic crystal nanocavity by manipulating Q-factor'',
Proceedings of SPIE - The International Society for Optical Engineering 8269, 82690G (2012).
DOI: 10.1117/12.908142T. Kojima, K. Kojima, T. Asano, and S. Noda,
"Alignment between a single quantum dot and a photonic crystal nanocavity by a microscopic photoluminescence imaging'',
2012 IEEE Photonics Conference, IPC 2012 676-677 (2012).
DOI: 10.1109/IPCon.2012.6358802K. Kojima, A. A. Yamaguchi, M. Funato, Y. Kawakami, and S. Noda,
"Impact of nonpolar plane for deep ultraviolet laser diodes based on AlGaN/AlN quantum wells'',
Conference Digest - IEEE International Semiconductor Laser Conference 101-102 (2010).
DOI: 10.1109/ISLC.2010.5642731M. Yamaguchi, T. Asano, K. Kojima, and S. Noda,
"Impact of anti-zeno effect on a coupled nanocavity-quantum-dot system'',
Optics InfoBase Conference Papers (2009).
DOI: 10.1364/cleo.2009.jwa97M. Yamaguchi, T. Asano, K. Kojima, and S. Noda,
"Impact of anti-Zeno effect on a coupled nanocavity-quantum-dot system'',
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 , 5226126 (2009).
[Link]M. Yamaguchi, T. Asano, K. Kojima, and S. Noda,
"Impact of anti-Zeno effect on a coupled nanocavity-quantum-dot system'',
Optics InfoBase Conference Papers (2009).
[Link]U.T. Schwarz, H. Braun, K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai,
"Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range'',
Proceedings of SPIE - The International Society for Optical Engineering 6485, 648506 (2007).
DOI: 10.1117/12.705867